High-field electrical conductivity in disordered systems

Philosophical Magazine Letters

Volumn 82, Issue 11, 2002, Pages 641-649

  Bourbie, D ^a   Ikrelef, N ^a   Nedellec P ^b  

^a UNIVERSITY OF ORAN   (Algeria)

^b UNIVERSITÉ D EVRY VAL D ESSONNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; ELECTRONS; HYDROGENATION; MATHEMATICAL MODELS; TRANSPORT PROPERTIES;

DISORDERED SYSTEMS; GAUSSIAN DISORDER MODEL; TUNNELING PROBABILITY;

ELECTRIC CONDUCTIVITY OF SOLIDS;

EID: 0036854354     PISSN: 09500839     EISSN: None     Source Type: Journal    
DOI: 10.1080/0950083021000025906     Document Type: Article

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