Sputtered Si:H alloys for edge filters: Application to thermophotovoltaics

Applied Optics

Volumn 41, Issue 31, 2002, Pages 6702-6707

  Martin, Peter M ^a   Olsen, Larry C ^a   Johnston, John W ^a   Depoy, David M ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY CONVERSION; INFRARED RADIATION; LIGHT INTERFERENCE; LIGHT REFLECTION; MULTILAYERS; OPTICAL COATINGS; OPTICAL FILTERS; PHOTONS; REFRACTIVE INDEX; SILICON ALLOYS; SPUTTER DEPOSITION;

EDGE FILTERS; THERMOPHOTOVOLTAICS;

PHOTOVOLTAIC CELLS;

EID: 0036850869     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.41.006702     Document Type: Article

References (14)

1. G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, and J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215-226 (1997).
2. B. A. Monk, Frequency Selective Surfaces, Theory and Design Wiley, New York (2000).
3. P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, and J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319-3327 (2001).
4. P. M. Martin and W. T. Pawlewicz, “Property composition relationships in sputter-deposited A-Si:H alloys,” Sol. Energy Mater. 2, 143-156 (1979/1980).
5. P. M. Martin and W. T. Pawlewicz, “Influence of sputtering conditions on H content and Si-H bonding in a-Si:H alloys,” J. Non-Cryst. Solids 45, 15-27 (1981).
6. M. Daouahi, A. Ben Othmane, K. Zellama, A. Zeinert, M. Es-samet, and H. Bouchriha, “Effect of hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered amorphous silicon films,” Solid State Commun. 120, 243-248 (2001).
7. E. C. Freeman and W. Paul, “Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon,” Phys. Rev. B 18, 4288-4300 (1978).
8. M. H. Brodsky, M. Cardona, and J. J. Coumo, “Infrared and Raman spectra of silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering,” Phys Rev. B 16, 3556-3571 (1977).
9. J. C. Knights, G. Lucovsky, and R. J. Newmanich, “Hydrogen bonding in silicon hydrogen alloys,” Philos. Mag. 30, 467-475 (1978).
10. S. B. White and D. R. McKenzie, “An electron diffraction study of amorphous hydrogenated germanium-carbon thin films,” J. Appl. Phys. 68, 3194-3197 (1990).
11. th, 467-471 (University of Edinburgh, Edinburgh, Scotland, 1977).
12. N. F. Mott and E. A. Davis, Electronic Proceses in NonCrystalline Materials (Clarendon, Oxford, 1979), p. 289.
13. H. A. Macleod, Thin Film Optical Filters, 2nd ed. (McGrawHill, New York, 1989), p. 164.
14. T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locas-cio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, and J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.