Surface electronic states of Yb silicide ultrathin films studied with He metastable deexcitation spectroscopy

Journal of Electron Spectroscopy and Related Phenomena

Volumn 127, Issue 1-2, 2002, Pages 109-115

  D'Addato, S ^a   Pasquali, L ^a   Nannarone, S ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Low energy electron diffraction; Metal semiconductor interfaces; Metastable induced electron spectroscopy; Silicon; Ytterbium

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; HELIUM; LOW ENERGY ELECTRON DIFFRACTION; SILICON COMPOUNDS; SPECTROSCOPY; SURFACE STRUCTURE; YTTERBIUM;

METASTABLE DEEXCITATION SPECTROSCOPY (MDS);

ULTRATHIN FILMS;

EID: 0036842426     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0368-2048(02)00179-2     Document Type: Article

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