The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1945-1948

  Jiang, Wen Jang ^a   Wu, Meng Chyi ^a   Yu, Hsin Chieh ^b   Huang, Chun Yuan ^c   Sung, Chia Pin ^c   Chi, Jim Yong ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Indium tin oxide; Vertical cavity surface emitting lasers

Indexed keywords

VERTICAL-CAVITY SURFACE EMITTING LASERS (VCSEL);

ELECTRIC CURRENTS; OPTICAL COMMUNICATION; OPTICAL DATA STORAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

OHMIC CONTACTS;

EID: 0036838850     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00128-4     Document Type: Conference Paper

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