Analysis of high speed P-I-N photodiodes S-parameters by a novel small-signal equivalent circuit model

IEEE Microwave and Wireless Components Letters

Volumn 12, Issue 10, 2002, Pages 378-380

  Wang, G ^b   Tokumitsu, T ^a,b   Hanawa, I ^b   Sato, K ^b   Kobayashi, M ^b  

^a IEEE

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Equivalent circuits; Photodiodes; Scattering parameters

Indexed keywords

CARRIER MOBILITY; EQUIVALENT CIRCUITS; OPTOELECTRONIC DEVICES; PHOTODIODES; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS; WAVEGUIDES;

CARRIER TRANSIT EFFECT; EXTERNAL RESISTANCE-CAPACITANCE; SMALL-SIGNAL RADIO-FREQUENCY EQUIVALENT CIRCUIT; VOLTAGE-CONTROLLED CURRENT;

ELECTRIC NETWORK ANALYSIS;

EID: 0036807192     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2002.804557     Document Type: Letter

References (5)

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