Design advantages of CDMA power amplifiers built with MOSFET technology

Microwave Journal

Volumn 45, Issue 10, 2002, Pages

  Sato, Tetsuo ^a   Grigorean, Chris ^a  

^a Hitachi Semiconductor (America) Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CODE DIVISION MULTIPLE ACCESS POWER AMPLIFIERS; POWER ADDED EFFICIENCY; QUIESCENT CURRENT;

CODE DIVISION MULTIPLE ACCESS; EFFICIENCY; ELECTRIC CURRENT MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; SPURIOUS SIGNAL NOISE; VOLTAGE MEASUREMENT;

POWER AMPLIFIERS;

EID: 0036805936     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (4)

1. I. Yoshida, "2 GHz Si Power MOSFET Technology," 1997 IEEE International Electron Device Meeting Digest, pp. 51-54.
2. CDMA Development Group, "Optional System Performance Tests," August 1, 1998, Rev 2.0, CDG35, 1998, August 1, pp. 2-3, 2-4.
3. T. Sato, et al., "Intelligent RF Power Module Using Automatic Bias Control (ABC) System for PCS CDMA Applications," 1998 IEEE International Microwave Symposium Digest, pp. 201-204.
4. J. Staudinger, et al., "High Efficiency CDMA RF Power Amplifier Using Dynamic Envelope Tracking Technique," 2000 IEEE International Microwave Symposium Digest, pp. 873-876.