Solving the selectivity problem in magnetic random access memories using configurations that form C-states

Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques

Volumn 93, Issue 10, 2002, Pages 963-969

  Arrott, Anthony S ^a  

^a Virginia State University   (United States)

Author keywords

Magnetic random access memory; Micromagnetics; Patterned thin film elements

Indexed keywords

CURRENT DENSITY; MAGNETISM; METALLURGY; RANDOM ACCESS STORAGE;

CURRENT CARRIERS; GAUSSIAN STATISTICS; MAGNETIC RANDOM ACCESS MEMORIES; MICROMAGNETICS;

MAGNETIC THIN FILMS;

EID: 0036804340     PISSN: 00443093     EISSN: None     Source Type: Journal    
DOI: 10.3139/146.020963     Document Type: Article

References (7)

1. One measure of the hype surrounding the activity in magnetic random access memories is that the insertion of "MRAM" into the "www.google.com" search box produces some 20 000 references.
2. Motorola has patented a selection scheme using ferromagnetic resonance.
3. Switching astroids and most of the concepts discussed here can be found in the book by A. Hubert and R. Schaefer, Magnetic Domains, Springer, Berlin, (1998). 148 - 152 and 201 - 214.
4. The author has measured more than 100 000 hysteresis loops in pseudo-spin valves of many shapes and sizes at Motorola and Honeywell. Because of the sensitivity of magnetoresistance to variations in the switching processes it is possible to connect the details of the processes to mental images from the results of micromagnetic calculations. Concepts such as thermal excitations, edge-soliton propagation, 360° walls, and end instabilities become everyday experiences. The study of minor loops is, perhaps, the most useful way of distinguishing among many possible interpretations of the magnetoresistance results.
5. Jing Shi, Saied Terhani, MRS symposium on Patterned Magnetic Structures (1998).
6. 2. Over limited ranges of bias field this is quite accurately the case for switching in a given mode. If the mode changes with bias field, this no longer works.
7. Prof. M. R. Scheinfein, now at Simon Fraser University, created and maintains the LLG Micromagnetics Simulator as a commercially available state-of-the-art package for design and characterization of MRAM bits as well as other technological applications of small magnetic devices.