Current-voltage characteristic and parameters of the current filament region of an amorphous gallium telluride-crystalline silicon barrier negistor structure

Technical Physics

Volumn 47, Issue 10, 2002, Pages 1263-1267

  Chesnys A ^a   Karpinskas, S A ^a   Urbelis, A ^a  

^a VILNIUS GEDIMINAS TECHNICAL UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036802808     PISSN: 10637842     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1514805     Document Type: Article

References (14)

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