Temperature and carrier density dependence of Auger recombination in a 3.4 μm InAs/GaSb/AlSb type-II laser device

Semiconductor Science and Technology

Volumn 17, Issue 10, 2002, Pages 1115-1122

  Drumm, J O ^a   Vogelgesang, B ^a   Hoffmann, G ^a   Schwender, C ^a   Herhammer, N ^a   Fouckhardt, H ^a  

^a Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; LASERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

CONDUCTION BANDS; NON-RADIATIVE RECOMBINATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036802765     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/10/315     Document Type: Article

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