Theory of exciton-polariton in GaN thin films

Solid State Communications

Volumn 124, Issue 3, 2002, Pages 109-112

  Vasconcelos, M S ^a   Albuquerque, E L ^b   Farias, G A ^c   Freire, V N ^c  

^a DEPARTAMENTO DE FÍSICA   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^c FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

A. Semiconductors; A. Thin films; D. Optical properties

Indexed keywords

BOUNDARY CONDITIONS; DISPERSIONS; ELECTROMAGNETISM; EXCITONS; GALLIUM NITRIDE; LIGHT POLARIZATION; PHOTOLUMINESCENCE; SUBSTRATES;

GUIDED MODES;

THIN FILMS;

EID: 0036793403     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00488-X     Document Type: Article

References (22)

1. Birman J.L. Rashba E.I., Sturge M.D., Excitons. 1982;North-Holland, Amsterdam.
2. Tchounkeu M., Briot O., Gil B., Alexis J.P., Aulombard R.-L. J. Appl. Phys. 80:1996;5352.
3. Stepniewski P., Korona K.P., Wysmolek A., Baranowski J.M., Pakula K., Potemski M., Gregory I., Porowski S. Phys. Rev. B. 56:1997;15151.
4. Yamaguchi M., Yagi T., Sota T., Deguchi T., Shimada K., Nakamura S. J. Appl. Phys. 85:1999;8502.
5. Chichibu S.F., Torii K., Deguchi T., Sota T., Setoguchi A., Nakanishi H., Azuhata T., Nakamura S. Appl. Phys. Lett. 76:2000;1576.
6. Torii K., Ono M., Sota T., Azuhata T., Chichibu S., Nakamura S. Phys. Rev. B. 62:2000;4723.
7. Nakamura S., Mukai T., Senoh M. Appl. Phys. Lett. 64:1994;1687. and the references therein.
8. Duboz J.Y., Khan M.A. Gil B., Physics and Applications of Nitride Compounds Semiconductors. 1997; Oxford University Press, New York.
9. Pekar S.I. Zh. Eksp. Teor. Fiz. 33:1957;1022. Sov. Phys. JETP 6 (1957) 785.
10. Pekar S.I. Zh. Eksp. Teor. Fiz. 33:1957;1022. Sov. Phys. JETP 6 (1957) 785.
11. Halevi P. Del Sole R., D'Andrea A., Lapiccirella A., Excitons in Confined Systems. 1988;Springer, Berlin.
12. Albuquerque E.L., Gonçalves da Silva C.E.T. J. Phys. C. 18:1985;665.
13. Philp R.N., Tilley D.R. Phys. Rev. B. 44:1991;8170.
14. Knoester J. Phys. Rev. Lett. 68:1992;654.
15. Andreani L.C. Phys. Status Solidi B. 188:1995;29.
16. Morkoç H., Strite S., Gao G.B., Lin M.E., Sversodlov B., Burns M. J. Appl. Phys. 73:1994;1363.
17. Morkoç H. Gil B., Aulombard R.L., Semiconductor Hetero-epitaxy. 1995;World Scientific, Singapore.
18. Gil B., Clur S., Briot O. Solid State Commun. 104:1997;267.
19. Andreani L.C., Panzarini G., Kakovin A.V., Vladimirova M.R. Phys. Rev. B. 57:1998;4670.
20. Citrin D.S. Phys. Rev. B. 49:1994;1943.
21. Citrin D.S. Phys. Rev. B. 50:1994;5497.
22. Lidzey D.G., Bradley D.D.C., Skolnick M.S., Virgili T., Walker S., Whittaker D.M. Nature. 395:1998;53.