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Solid State Ionics

Volumn 150, Issue 3-4, 2002, Pages 443-448

Simulation of flourine migration in NiF2

(3) Atkinson, K J W a Grimes, Robin W b Owens, Scott L c

a IMPERIAL COLLEGE LONDON (United Kingdom)

b DAVY FARADAY RESEARCH LABORATORY (United Kingdom)

c SELLAFIELD LTD (United Kingdom)

Author keywords

Flourine migration; Point defect; Transport property

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; FILM GROWTH; LATTICE CONSTANTS; NICKEL COMPOUNDS; POINT DEFECTS; TRANSPORT PROPERTIES;

ATOMISTIC SIMULATION;

IONIC CONDUCTION;

EID: 0036781809 PISSN: 01672738 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-2738(02)00417-4 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.