Charactersization of a novel GaAs-based microwave optical switch

Solid-State Electronics

Volumn 46, Issue 10, 2002, Pages 1573-1577

  Lau, K M ^a   Wang, H ^a   Zheng, H Q ^a   Xiong, Y Z ^a   Radhakrisnan, K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

GaAs; Ohmic; Photodiode; Schottky

Indexed keywords

CHARACTERIZATION; FABRICATION; LEAKAGE CURRENTS; MICROWAVE DEVICES; PHOTODIODES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SOLID STATE DEVICE STRUCTURES;

MICROWAVE OPTICAL SWITCHES;

OPTICAL SWITCHES;

EID: 0036779145     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00107-7     Document Type: Conference Paper

References (10)

1. Optical control of microwave semiconductor devices
2. Studies of high-speed metal-semiconductor-metal photodetector with GaAs/AlGaAs/GaAs heterostructure
3. Material characterization and optimization for high-speed metal-semiconductor-metal photodetectors
4. Overall performance improvement in GaAs MSM photodetectors by using recessed-cathode structure
5. 0.47As metal-semiconductor-metal photodiodes with transparent cadium tin oxide Schottky contacts
6. Optimization of high-speed metal-semiconductor-metal photodetectors
7. Recombination at semiconductor surfaces and interfaces
8. Emitter-base junction size effect on current gain Hfe of AlGaAs/GaAs heterojunction bipolar transistors