Deposition of silicon films in presence of nitrogen plasma - A feasibility study

Bulletin of Materials Science

Volumn 25, Issue 5, 2002, Pages 399-402

  Patil, Sheetal J ^a   Bodas, Dhananjay S ^a   Phatak, G J ^b   Gangal, S A ^a  

^a UNIVERSITY OF PUNE   (India)

^b CENTRE FOR MATERIALS FOR ELECTRONICS TECHNOLOGY C MET   (India)

Author keywords

ARE; Ellipsometry; SEM; Silicon nitride ( phase); XRD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON BEAMS; ELLIPSOMETRY; EVAPORATION; IONIZATION; NITROGEN; PLASMA APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; X RAY DIFFRACTION ANALYSIS;

ACTIVATED REACTIVE EVAPORATIONS (ARE);

SEMICONDUCTING FILMS;

EID: 0036773003     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02708017     Document Type: Article

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