Multiple-wavelength emission from InxGa1-xAs-GaAs quantum wells grown on a nanoscale faceted GaAs substrate by molecular beam epitaxy

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 5, 2002, Pages 972-983

  Lee, S C ^a   Dawson, L R ^a   Malloy, K J ^a   Brueck, S R J ^a  

^a University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; INTERFEROMETRY; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; TRANSMITTERS; WAVELENGTH DIVISION MULTIPLEXING;

INTERFEROMETRIC LITHOGRAPHY; LINEAR POLARIZATION; MULTIPLE WAVELENGTH EMISSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036765724     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.804253     Document Type: Article

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