Strain sensors based on magnetostrictive GMR/TMR structures

IEEE Transactions on Magnetics

Volumn 38, Issue 5 I, 2002, Pages 2826-2828

  Lohndorf M ^a   Duenas, T A ^a   Ludwig, Alfred ^a   Rührig, Manfred ^b   Wecker, J ^b   Burgler D ^c   Grunberg P ^c   Quandt, Eckhard ^a  

^a CENTER OF ADVANCED EUROPEAN STUDIES AND RESEARCH CAESAR   (Germany)

^b SIEMENS AG   (Germany)

^c IFF   (Germany)

Author keywords

Giant magnetoresistance (GMR); Magnetic tunneling junctions (MTJ); Magnetostriction; Sensors

Indexed keywords

AMORPHOUS ALLOYS; GIANT MAGNETORESISTANCE; MAGNETIC FIELDS; MAGNETOSTRICTION; STRAIN; STRESSES;

MAGNETIC TUNNELING JUNCTIONS (MTJ);

SENSORS;

EID: 0036763036     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2002.802466     Document Type: Article

References (9)

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