Photodetachment of FSi(OMe)4 - and FGe(OMe)4 - anions: An experimental and theoretical study of gas-phase hypervalent Si and Ge species

International Journal of Mass Spectrometry

Volumn 219, Issue 3, 2002, Pages 485-495

  Xavier, Luciano A ^a   Morgon, Nelson H ^b   Menegon, Jair J ^a   Riveros, José M ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

Computational Si chemistry; Fluoride affinity; Hypervalent anions of Si and Ge; Photodetachment

Indexed keywords

ANION; FLUORIDE; FLUORINE; FLUOROSILICONE; GERMANIUM DERIVATIVE; HYDROGEN; LIGAND; OXIDE; SILICONE;

AB INITIO CALCULATION; ARTICLE; ATOM; BINDING AFFINITY; CHEMICAL PHENOMENA; CHEMICAL STRUCTURE; COVALENT BOND; DISSOCIATION; ELECTRICITY; ENERGY; EXPERIMENT; GAS; PHYSICAL PHASE; PREDICTION; SPECTRAL SENSITIVITY; SPECTROSCOPY; THEORY; THERMODYNAMICS;

EID: 0036757271     PISSN: 13873806     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1387-3806(02)00702-9     Document Type: Article

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