Temperature dependence of photocurrent and band gap of Cl-doped semi-insulating CdTe with evaporated Au electrodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 9, 2002, Pages 5538-5541

  Yamanaka, Sadanori ^a   Tsushima, Shugo ^b   Shimizu, Hidetoshi ^c   Tokumaru, Yozo ^d  

^a CHUO UNIVERSITY   (Japan)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

^c TOKYO OHKA KOGYO CO LTD   (Japan)

^d MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Band gap; CdTe; Cl doped semi insulating CdTe; Photocurrent

Indexed keywords

AMORPHOUS MATERIALS; CHLORINE; ELECTRODES; ENERGY GAP; EVAPORATION; GOLD; PHOTOCURRENTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

AMORPHOUS SEMICONDUCTORS;

CADMIUM COMPOUNDS;

EID: 0036756990     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5538     Document Type: Article

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