Chemical vapor deposited RuOx films. Effect of oxygen flow rate

Journal of the Electrochemical Society

Volumn 149, Issue 9, 2002, Pages

  Gopal Ganesan, P ^a   Eizenberg, M ^a   Dornfest, C ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; MORPHOLOGY; NUCLEATION; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; STRESSES; SURFACE ROUGHNESS; SURFACES;

ELEMENTAL ANALYSIS; OXYGEN FLOW RATE; RUTHENIUM OXIDE; SILICON SUBSTRATE;

RUTHENIUM COMPOUNDS;

EID: 0036749325     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1495910     Document Type: Article

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