The effect of Si doping in (CdS)1-x-y(ZnS)xSiy photocatalysts studied by electrochemical impedance spectroscopy and band bending theory

Journal of the Electrochemical Society

Volumn 149, Issue 9, 2002, Pages

  Rincon M E ^a   Martinez M W ^a   Miranda Hernandez M ^a   Gonzalez I ^b  

^a INSTITUTO DE ENERGÍAS RENOVABLES   (Mexico)

^b DEPARTAMENTO DE QUÍMICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; DOPING (ADDITIVES); FILM PREPARATION; PHOTOCATALYSIS; SCREEN PRINTING; SILICON; SINTERING; SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

BAND BENDING THEORY; PHOTOELECTROCHEMICAL PROPERTIES; STRUCTURAL PROPERTIES;

CADMIUM SULFIDE;

EID: 0036748566     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1495499     Document Type: Article

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