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Volumn 45, Issue SUPP., 2002, Pages

Using FIB for TEM analysis of semiconductor materials

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DIELECTRIC MATERIALS; ELECTRON ENERGY LOSS SPECTROSCOPY; ETCHING; ION BEAMS; NANOSTRUCTURED MATERIALS; PROCESS ENGINEERING; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

EID: 0036748372     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (2)
  • 1
    • 1542330903 scopus 로고    scopus 로고
    • High yield and high throughput TEM sample preparation using focused ion beam automation
    • R.J. Young et al., "High Yield and High Throughput TEM Sample Preparation Using Focused Ion Beam Automation," ISTFA 1998 Proceedings.
    • (1998) ISTFA 1998 Proceedings
    • Young, R.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.