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Semiconductor Science and Technology

Volumn 17, Issue 9, 2002, Pages 924-930

Optoelectrical properties of electrodeposited CdxHg1-xTe with a bandgap energy of 1.35 eV

(1) Rakhshani, A E a

a KUWAIT UNIVERSITY (Kuwait)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; FERMI LEVEL; SCHOTTKY BARRIER DIODES; SEMICONDUCTING CADMIUM TELLURIDE; STAINLESS STEEL;

BANDGAP ENERGY;

TERNARY SYSTEMS;

EID: 0036714205 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/9/304 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.