Dopant emission mechanism and the effects of host materials on the behavior of doped organic light-emitting diodes

IEEE Transactions on Electron Devices

Volumn 49, Issue 9, 2002, Pages 1540-1544

  Qiu, Chengfeng ^a   Chen, Haiying ^a   Wong, Man ^a   Kwok, Hoi S ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Carrier trapping; Doping; Emission mechanism; Lifetime; Organic light emitting diode

Indexed keywords

COMPOSITION EFFECTS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRON EMISSION; ELECTRON TRAPS; HOLE MOBILITY; HOLE TRAPS; LIGHT ABSORPTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING;

DOPANT EMISSION; ELECTRON TRANSPORT; LUMINANCE; ORGANIC LIGHT EMITTING DIODES; TRISHYDROXYQUINOLINE ALUMINUM;

LIGHT EMITTING DIODES;

EID: 0036712531     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.802620     Document Type: Article

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