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Volumn 17, Issue 9, 2002, Pages 1013-1022

Efficiencies in multiquantum well lasers

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; QUANTUM EFFICIENCY; RADIATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036712367     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/9/320     Document Type: Article
Times cited : (3)

References (36)
  • 1
    • 0002219395 scopus 로고
    • Confined carrier quantum states in ultrathin semiconductor heterostructure
    • New York: Pergamon
    • (1975) Festkorperprobleme , vol.15
    • Dingle, R.1
  • 17
    • 21644439238 scopus 로고
    • Effect of band tails on stimulated emission of light in semiconductor
    • (1966) Phys. Rev. , vol.148 , pp. 189-194
    • Stern, F.1
  • 32
    • 0001081260 scopus 로고
    • Experimental-determination of the influence of gain saturation on the temperature-dependence of threshold current in short AlGaAs-GaAs quantum-well lasers
    • (1992) Appl. Phys. Lett. , vol.60 , pp. 401-403
    • Jung, H.1    Schlosser, E.2    Deufel, R.3
  • 36
    • 0001081260 scopus 로고
    • Experimental-determination of the influence of gain saturation on the temperature-dependence of threshold current in short AlGaAs-GaAs quantum-well lasers
    • (1992) Appl. Phys. Lett. , vol.60 , pp. 401-403
    • Jung, H.1    Shlosser, E.2    Deufel, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.