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Semiconductor Science and Technology

Volumn 17, Issue 9, 2002, Pages 947-951

Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation

(7) Kulbachinskii, V A a Lunin, R A a Rogozin, V A a Mokerov, V G b Fedorov, Yu V b Khabarov, Yu V b De Visser, A c

a MOSCOW STATE UNIVERSITY (Russian Federation)

b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS (Russian Federation)

c UNIVERSITY OF AMSTERDAM (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPOSITION; ELECTRIC RESISTANCE; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SHUBNIKOV-DE HAAS EFFECT; TRANSPORT PROPERTIES;

HOPPING CONDUCTIVITY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0036712352 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/9/308 Document Type: Article

Times cited : (10)

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