Luminescence following highly localized hole carrier injection into InGaAs quantum dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 8, 2002, Pages 5127-5128

  Johal, T K ^a,b   Pagliara, G ^a   Lomascolo, M ^a   Taurino, A ^a   Catalano, M ^a   Rinaldi, R ^a   Passaseo, A ^a   Cingolani, R ^a  

^a NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^b UNIVERSITY OF SALENTO   (Italy)

Author keywords

Luminescence; Quantum dot; Scanning tunneling microscopy; Single dot spectroscopy

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

HOLE CARRIER INJECTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036698034     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5127     Document Type: Article

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