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Journal of the Electrochemical Society

Volumn 149, Issue 8, 2002, Pages

Silicon orientation effects in the initial regime of wet oxidation

(3) Ngau, Julie L a Griffin, Peter B a Plummer, James D a

a Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; BORON; CRYSTAL GROWTH; CRYSTAL ORIENTATION; OXIDATION; OXIDES; REACTION KINETICS; SURFACES;

OXIDATION RATE; OXIDE GROWTH; SILICON ORIENTATION; WET OXIDATION;

SILICON WAFERS;

EID: 0036687389 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1491986 Document Type: Article

Times cited : (19)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.