Fatigue-free lead zirconate titanate (Pb(Zr, Ti)O3)-based capacitors Co-modified by lanthanum and lithium for nonvolatile memories

Journal of the American Ceramic Society

Volumn 85, Issue 8, 2002, Pages 2122-2124

  Shannigrahi, Santiranjan R ^a   Lee, Sun Hwa ^a   Jang, Hyun M ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COERCIVE FORCE; FATIGUE OF MATERIALS; FERROELECTRICITY; HIGH TEMPERATURE EFFECTS; LANTHANUM; LIGHT POLARIZATION; LITHIUM; SEMICONDUCTING LEAD COMPOUNDS; SOL-GELS; THIN FILMS;

NONVOLATILE FERROELECTRIC MEMORIES;

CERAMIC CAPACITORS;

EID: 0036686687     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2002.tb00417.x     Document Type: Article

References (13)

1. The physics of ferroelectric memories
2. Ferroelectric ceramics: History and technology
3. Retention and imprint properties of ferroelectric thin films
4. 2 capacitor heterostructures
5. 3 thin films prepared by pulsed-laser deposition technique
6. 3 thin films grown on Ir electrode barrier and their electrical properties
7. Ferroelectric behaviors dominated by mobile and randomly quenched impurities in modified lead zirconate titanate ceramics
8. Acceptor dopant effects on endurance of PZT thin films
9. 3 buffer layer
10. Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories
11. 3
12. Mechanism of fatigue in ferroelectric thin films