A low-noise and broad-band erbium-doped tellurite fiber amplifier with a seamless amplification band in the C- and L-bands

IEEE Photonics Technology Letters

Volumn 14, Issue 8, 2002, Pages 1073-1075

  Ono, H ^a,b   Mori, A ^b   Shikano, K ^b   Shimizu Member, M ^a,b  

^a IEEE   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Optical communication; Optical fiber amplifiers; Wavelength division multiplexing

Indexed keywords

AMPLIFICATION; BANDWIDTH; GAIN MEASUREMENT; INSERTION LOSSES; OPTICAL COMMUNICATION; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; WAVELENGTH DIVISION MULTIPLEXING;

ERBIUM-DOPED TELLURITE FIBER AMPLIFIERS (EDFA);

LIGHT AMPLIFIERS;

EID: 0036684591     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.1021972     Document Type: Article

References (10)

1. 3.2 Tb/s-1 500 km WDM transmission experiment using 64 nm hybrid repeater amplifier
2. 1 terabit/s WDM transmission over 10 000 km
3. 3+-doped fiber amplifier in a parallel configuration
4. A gain-flattened ultra wide band EDFA for high capacity WDM optical communications systems
5. 3+-doped silica fiber amplifier with low noise characteristics
6. Gain-flattened tellurite-based EDFA with a flat amplification bandwidth of 76 nm
7. Wideband erbium-doped fiber amplifiers with three-stage amplification
8. 3+ -doped tellurite-based fiber amplifier with a low-noise figure of less than 4.5 dB
9. S/N and error rate performance in AlGaAs semiconductor laser preamplifier and linear repeater systems
10. Suppression of nonlinear effects in tellurite-based EDFA's by fiber parameter modification