Different types of scaling in epitaxial growth

Computer Physics Communications

Volumn 147, Issue 1-2, 2002, Pages 111-114

  Brendel, L ^a   Schindler, A ^a   Von den Driesch, M ^a   Wolf, D E ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Interface alloying; Molecular beam epitaxy; Scaling; Surface diffusion

Indexed keywords

ALLOYING; COMPUTER SIMULATION; DIFFUSION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY;

INTERFACE ALLOYING; SURFACE DIFFUSION;

THIN FILMS;

EID: 0036681581     PISSN: 00104655     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0010-4655(02)00227-8     Document Type: Conference Paper

References (11)

1. Continuum models of crystal growth from atomic beams with and without desorption
2. Understanding surfactant-mediated growth, contributions of ab initio calculations
3. Self-organized lateral superlattice formation by vertical exchange reactions
4. Submonolayer epitaxy with impurities: Kinetic Monte Carlo simulations and rate-equation analysis
5. Origin of scale invariance in growth processes
6. Atomistic mechanism of surfactant-assisted epitaxial growth
7. Diffusion and growth on strained surfaces