Thermoelectric efficiency in graded indium-doped PbTe crystals

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1425-1430

  Dashevsky, Z ^a   Shusterman, S ^a   Dariel, M P ^a   Drabkin, I ^b  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^b Institute of Chemical Problems for Microelectronics   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION PROFILES; CONDUCTION BAND EDGE; DOPANT CONCENTRATIONS; FIGURE OF MERITS; HIGH QUALITY; MAXIMAL VALUES; NARROW TEMPERATURE RANGES; OPTIMAL VALUES; PBTE; SPECIFIC LOCATION; TEMPERATURE RANGE; THERMOELECTRIC CONVERSION; THERMOELECTRIC EFFICIENCY; THERMOELECTRIC MATERIAL; Z VALUE;

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRON DENSITY MEASUREMENT; FERMI LEVEL; FUNCTIONALLY GRADED MATERIALS; INDIUM; THERMOELECTRICITY;

THERMAL CONDUCTIVITY;

EID: 0036677376     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1490152     Document Type: Article

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