Effect of temperature on high-power RF LDMOS transistors

Applied Microwave and Wireless

Volumn 14, Issue 8, 2002, Pages 36-43

  Lembeye, Olivier ^a   Nanan, Jean Christophe ^a  

^a Motorola Labs   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR RADIO SYSTEMS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTROMIGRATION; ELECTRON MOBILITY; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; HEAT LOSSES; MOS DEVICES; POWER AMPLIFIERS; POWER CONTROL; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; TRANSCONDUCTANCE;

DRAIN CURRENTS; LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTORS (LDMOS);

FIELD EFFECT TRANSISTORS;

EID: 0036671132     PISSN: 10750207     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. High-power RF LDMOS transistors target WCDMA, IMT2000/UMTS application at 2100 MHz
2. A new dynamic electrothermal nonlinear model for silicon RF LDMOS FETS
3. GSM/EDGE: Device characterization for RF power amplifier
4. RF LDMOS power modules for GSM base station application: Optimum biasing circuit
5. Electromigration failure modes in aluminium metallization for semiconductor devices
6. High-power LDMOS performance prediction using a nonlinear model