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Volumn 52, Issue 7, 2002, Pages 877-881
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Dependence of the lowest impurity state on alloy composition in GaAs-(Al,Ga)As quantum dots
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Author keywords
Binding energy; Impurity level; Quantum dots; Semiconductors
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Indexed keywords
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EID: 0036665445
PISSN: 00114626
EISSN: None
Source Type: Journal
DOI: 10.1023/A:1016271227232 Document Type: Article |
Times cited : (1)
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References (9)
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