Specific features in the generation and motion of dislocations in silicon single crystals doped with nitrogen

Physics of the Solid State

Volumn 44, Issue 7, 2002, Pages 1278-1283

  Mezhennyi, M V ^a   Mil'vidskii M G ^b   Reznik, V Ya ^b  

^a Federal State Unitary Enterprise   (Russian Federation)

^b Institute of Chemical Problems for Microelectronics   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036661407     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1494622     Document Type: Article

References (11)

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8. K. Sumino, in Proceedings of the 1st International Autumn School on Gettering and Defect Engineering in the Semiconductor Technology, Garzau, 1985, Ed. by H. Richter, p. 41.
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11. K. Nakai, Y. Inoue, H. Yokota, et al., in Proceedings of the 3rd International Symposium on Advance Science and Technology of Silicon Materials, 2000, p. 88.