Pseudo-real time observation of the dynamics of phase defect on Si(100) surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 7 B, 2002, Pages 5017-5020

  Yoshida, Shoji ^a   Takeuchi, Osamu ^a   Hata, Kenji ^a   Morita, Ryuji ^b   Yamashita, Mikio ^b   Shigekawa, Hidemi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Defect; Dimer; Low temperature; Phase transition; Scanning tunneling microscopy; Si(100); Step

Indexed keywords

CRYSTAL DEFECTS; DIMERS; ELECTRONIC STRUCTURE; LOW TEMPERATURE EFFECTS; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; STRAIN;

PHASE DEFECTS;

SURFACE PROPERTIES;

EID: 0036657434     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5017     Document Type: Conference Paper

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