Impact of hot carrier stress on low-frequency noise characteristics in floating-body silicon-on-insulator metal oxide semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 7 A, 2002, Pages 4427-4431

  Tsuchiya, Toshiaki ^a,b   Yoshida, Toshiyuki ^a   Sato, Yasuhiro ^a  

^a SHIMANE UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Floating body effect; Hot carrier; Low frequency noise; MOSFET; SOI

Indexed keywords

ELECTRON TRAPS; HOT CARRIERS; IMPACT IONIZATION; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE; VLSI CIRCUITS;

FLOATING-BODY EFFECT; HOT CARRIER STRESS; INTERFACE-TRAP; LOW-FREQUENCY NOISE CHARACTERISTICS;

MOSFET DEVICES;

EID: 0036656333     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4427     Document Type: Article

References (8)