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Applied Physics B: Lasers and Optics

Volumn 75, Issue 1, 2002, Pages 63-66

Amplified luminescence and threshold current temperature dependencies of ZnSe and GaN laser diodes

(4) Burov, L I a Ryabtsev, G I b Smal, A S c Waraxe, I N a

a BELARUSIAN STATE UNIVERSITY (Belarus)

b B I STEPANOV INSTITUTE OF PHYSICS (Belarus)

c BREST STATE TECHNICAL UNIVERSITY (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; CURRENT DENSITY; GALLIUM NITRIDE; NONLINEAR OPTICS; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

FLUX DENSITIES;

SEMICONDUCTOR LASERS;

EID: 0036656242 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-002-0930-8 Document Type: Article

Times cited : (11)

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