Is there light at the end of the road for optical lithography?

IEEE Circuits and Devices Magazine

Volumn 18, Issue 4, 2002, Pages 50-58

  Levinson, Harry J ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; MASKS; MICROELECTRONICS; NANOTECHNOLOGY; REQUIREMENTS ENGINEERING; TECHNOLOGY TRANSFER; VLSI CIRCUITS; X RAY LITHOGRAPHY;

EXTREME ULTRAVIOLET LITHOGRAPHY; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; NEXT GENERATION LITHOGRAPHIC TECHNOLOGY; OPTICAL MASK;

PHOTOLITHOGRAPHY;

EID: 0036654019     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2002.1021122     Document Type: Article

References (11)

1. Pattern displacement measurements for Si stencil reticles
2. New approach to projection-electron lithography with demonstrated 0.1 micron linewidth
3. 1 = 0.5: Get 0.25 μm lithography ready for manufacturing
4. The mask error factor in optical lithography
5. Effects of mask bias on the mask error enhancement factor (MEEF) of contact holes
6. Will phase-shift save lithography
7. Performance results of a new generation of 300 mm lithography systems
8. Cost of ownership for 1 × proximity x-ray lithography