Effect of deposition rate on structural and electrical properties of al films deposited on glass by electron beam evaporation

Thin Solid Films

Volumn 414, Issue 1, 2002, Pages 150-153

  Qiu, Hong ^a,b   Wang, Fengping ^a,b   Wu, Ping ^a,b   Pan, Liqing ^a,b   Li, Lingyu ^a,b   Xiong, Liangyon ^a,b   Tian, Yue ^a,b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b Beijing Keda Tianyu Microelectronic Materials Technology Development Co Ltd   (China)

Author keywords

Aluminium film; Deposition rate; Impurity; Resistivity; Structure

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; EVAPORATION; GRAIN SIZE AND SHAPE; SURFACE ROUGHNESS;

ELECTRON BEAM EVAPORATION;

METALLIC FILMS;

EID: 0036647730     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00454-6     Document Type: Article

References (12)