Photonic band gap material for integrated photonic application: Technological challenges

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 537-544

  François, Marc ^a   Danglot, J ^a   Grimbert, B ^a   Mounaix, P ^a   Muller, M ^a   Vanbesien O ^a   Lippens, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Deep reactive ion etching; Electron beam lithography; Microphotonics; Photonic band gap

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRON BEAM LITHOGRAPHY; ENERGY GAP; INTEGRATED OPTOELECTRONICS; MASKS; MULTIPLEXING; NANOTECHNOLOGY; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE;

PHOTONIC CRYSTALS (PC);

MICROELECTRONICS;

EID: 0036643650     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00526-9     Document Type: Conference Paper

References (8)

1. Channel drop tunneling through localized states
2. Photonic band gap structure: The face centered-cubic case employing nonspherical atoms
3. Triangular and hexagonal high Q-factor 2D photonic band gap cavities on III-V suspended membrane
4. Use of guided spontaneous emission of a semiconductor to probe the optical properties of two dimensional photonic crystals
5. Calculating photonic band gap structure
6. Near infrared Yablonovite-like photonic crystals by focused-ion beam etching of macro-porous silicon