Impact of front oxide quality on transient effects and low-frequency noise in partially and fully depleted SOI N-MOSFETs

Solid-State Electronics

Volumn 46, Issue 7, 2002, Pages 1013-1017

  Haendler, S ^a   Dieudonne F ^a   Jomaah, J ^a   Balestra, F ^a   Raynaud, C ^b   Pelloie, J L ^b  

^a Grenoble INP Phelma   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; STRESS ANALYSIS; SUBSTRATES;

LOW-FREQUENCY NOISES;

MOSFET DEVICES;

EID: 0036642930     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00035-7     Document Type: Conference Paper

References (10)

1. Generation-recombination transient effects in partially depleted SOI transistors: Systematic experiments and simulations
2. Physical noise modelling of SOI MOSFET's with analysis of the Lorentzian component in the low-frequency noise spectrum
3. Comparative low frequency noise analysis in various SOI devices: Floating body, body-tied, DTMOS with and without current limiter
4. Low-frequency noise in MOS transistors
5. Low-frequency noise in electrically stressed n-MOSFETs
6. Floating body induced pre-kink excess low frequency noise in submicron SOI CMOSFET technology
7. Unified 1/f noise SOI MOSFET modelling for circuit simulation
8. Low frequency noise in fully depleted SOI MOSFET's
9. Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET's