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Microelectronics Journal

Volumn 33, Issue 7, 2002, Pages 553-557

Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

(8) Gutierrez M a Herrera, M a Gonzalez D a Aragon G a Sanchez J J b,d Izpura, I b Hopkinson, M c,e Garcia R a

a UNIVERSITY OF CÁDIZ (Spain)

b UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

c UNIVERSITY OF SHEFFIELD (United Kingdom)

d NOKIA RESEARCH CENTER (United States)

e Marconi Optical Components (United Kingdom)

Author keywords

(111); AlGaAs; Critical layer thickness; Dislocation multiplication; InGaAs; Laser; MBE; Transmission electron microscopy

Indexed keywords

ALUMINUM CLADDING; CRYSTAL GROWTH; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY; WAVEGUIDES;

CRITICAL LAYER THICKNESS (CLT); OPTICAL CONFINEMENT; THREADING DISLOCATIONS (TD);

LASERS;

EID: 0036641741 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2692(02)00018-6 Document Type: Conference Paper

Times cited : (2)

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