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Volumn 149, Issue 7, 2002, Pages
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Analysis of defect structure of the proton-conducting oxide CaZr0.9In0.1O3-δ by a dc polarization technique
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
CURRENT VOLTAGE CHARACTERISTICS;
DEFECTS;
DOPING (ADDITIVES);
ELECTRIC CURRENTS;
ELECTRIC POTENTIAL;
MOLECULAR STRUCTURE;
PARTIAL PRESSURE;
POLARIZATION;
POSITIVE IONS;
PROTONS;
PROTON-CONDUCTING OXIDES;
PEROVSKITE;
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EID: 0036641084
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1481528 Document Type: Article |
Times cited : (11)
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References (10)
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