Slab-coupled 1.3-μm semiconductor laser with single-spatial large-diameter mode

IEEE Photonics Technology Letters

Volumn 14, Issue 6, 2002, Pages 756-758

  Walpole, J N ^a,b,c   Donnelly, J P ^a,b   Taylor, P J ^b   Missaggia, L J ^b   Harris, C T ^b   Bailey, R J ^b   Napoleone, A ^b   Groves, S H ^b   Chinn, S R ^a,b,d   Huang, R ^b   Plant, J ^b  

^a IEEE   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c Mode Match Inc   (United States)

^d Withmalachite Technologies Inc   (United States)

Author keywords

High power diode lasers; Semiconductor lasers; Single mode semiconductor lasers

Indexed keywords

LASER STRUCTURE; RIB WAVEGUIDE; SINGLE MODE SEMICONDUCTOR LASERS;

CURRENT DENSITY; LASER MODES; OPTICAL FIBER COUPLING; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SINGLE MODE FIBERS;

SEMICONDUCTOR LASERS;

EID: 0036609855     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.1003083     Document Type: Article

References (5)

1. Slab-coupled waveguides
2. Analysis of rib dielectric waveguides
3. Microwave equivalent circuit representation of rectangular dielectric waveguide
4. Low-transparency-current-density, high-gain 1.3 μm strained-layer InGaAsP/InP quantum well laser material
5. Strained-layer InGaAsP diode lasers with tapered gain region for operation at 1.3 μm