SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 17, Issue 6, 2002, Pages 621-624

Dark current through GaAs/AlGaAs multiple quantum wells

(3) Donchev, V a,c Bourgoin, J C a Bois, P b

a SORBONNE UNIVERSITÉ (France)

b THALES (France)

c UNIVERSITY OF SOFIA (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMIONIC EMISSION;

BALLISTIC TRANSPORT; CARRIER TRANSPORT; DARK CURRENT; DRIFT DIFFUSION; POOLE-FRENKEL BARRIER LOWERING; TEMPERATURE DEPENDENCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036609842 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/6/321 Document Type: Article

Times cited : (21)

References (13)

1
- 0000327601
- ed R K Willardson and E R Weber (San Diego: Academic)
- (2000) Intersubband Transitions in Quantum Wells: Physics and Device Applications I, Semiconductors and Semimetals , vol.62 , pp. 129-196
- Liu, H.C.¹

2
- 0027687152
- (1993) J. Appl. Phys. , vol.74
- Levine, B.F.¹

3
- 0001477983
- (1993) J. Appl. Phys. , vol.73 , pp. 2029
- Liu, H.C.¹ Steele, A.G.² Buchanan, M.³ Wasilewski, Z.R.⁴

4
- 0000997687
- (1996) J. Appl. Phys. , vol.79 , pp. 8121
- Karunasiri, G.¹

5
- 0001680539
- (1999) J. Appl. Phys. , vol.85 , pp. 2972
- Liu, H.C.¹ Szmulowicz, F.² Wasilewski, Z.R.³ Buchanan, M.⁴ Brown, G.J.⁵

6
- 33750137545
- ed B F Andresen and M Strojnik
- (1997) Proc. SPIE Infrared Technology and Applications XXIII , vol.3061 , pp. 749
- Liu, H.C.¹ Li, L.² Khanna, S.M.³ Buchanan, M.⁴

7
- 0031207579
- (1997) Semicond. Sci. Technol. , vol.12 , pp. 947
- Li, L.¹ Liu, H.C.² Wilson, P.H.³ Buchanan, M.⁴ Khanna, S.M.⁵

8
- 0029354889
- (1995) Infrared Phys. Technol. , vol.36 , pp. 837
- Akhmetov, V.D.¹ Gorokhov, E.B.² Moshegov, N.T.³ Toropov, A.I.⁴

9
- 0009692666
- (1994) Appl. Phys. Lett. , vol.64 , pp. 478
- Fiore, A.¹ Rosencher, E.² Bois, P.³ Nagle, J.⁴ Laurent, M.⁵

10
- 0009701819
- (1993) J. Appl. Phys. , vol.74 , pp. 341
- Feng, S.L.¹ Krynicki, J.² Zazoui, M.³ Bourgoin, J.C.⁴

11
- 0002301335
- ed S Li Sheng and Su Yan-Kuin (Boston: Kluwer)
- (1998) Intersubband Transitions in Quantum Wells: Physics and Devices , pp. 43-49
- Bandara, S.¹ Gunapala, S.² Liu, J.³ Mumolo, J.⁴ Luong, E.⁵ Hong, W.⁶ Sengupta, D.⁷

12
- 0004005306
- (New York: Wiley)
- (1981) Physics of Semiconductor Devices , pp. 250
- Sze, S.M.¹

13
- 0004237593
- (New York: Cambridge University Press)
- (1993) Doping in III-V Semiconductors
- Schubert, E.F.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.