Electronic structure of TiO2 monolayers grown on Al2O3 and MgO studied by resonant photoemission spectroscopy

Surface Science

Volumn 507-510, Issue , 2002, Pages 672-677

  Sanchez Agudo M ^a   Soriano, L ^a   Quiros C ^a   Roca, L ^b,c   Perez Dieste V ^b,c   Sanz, J M ^a  

^a INSTITUTO NICOLÁS CABRERA   (Spain)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Aluminum oxide; Coatings; Insulating films; Interface states; Near edge extended X ray absorption fine structure (NEXAFS); Photoemission (total yield); Titanium oxide

Indexed keywords

ABSORPTION SPECTROSCOPY; ALUMINA; BAND STRUCTURE; CHEMICAL BONDS; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; GROWTH (MATERIALS); INTERFACES (MATERIALS); MAGNESIA; MONOLAYERS; PHOTOEMISSION; SUBSTRATES; TITANIUM DIOXIDE; X RAY SPECTROSCOPY;

RESONANT PHOTOEMISSION SPECTROSCOPY; VALENCE BANDS;

SURFACE STRUCTURE;

EID: 0036609296     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)01334-1     Document Type: Conference Paper

References (14)