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Volumn 193, Issue 1-4, 2002, Pages 835-845
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Modification of wetting properties of SiOx surfaces by Ar implantation
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Author keywords
Contact angles; Ion implantation; Quartz; Silicon oxide; Wetting; XPS
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Indexed keywords
ARGON;
CHEMICAL MODIFICATION;
COMPOSITION EFFECTS;
HYDROPHILICITY;
HYSTERESIS;
INSULATING MATERIALS;
ION BOMBARDMENT;
PARTIAL PRESSURE;
QUARTZ;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SILICON COMPOUNDS;
SURFACES;
WETTING;
X RAY PHOTOELECTRON SPECTROSCOPY;
ION BEAM IRRADIATION;
ION IMPLANTATION;
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EID: 0036608689
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(02)00913-8 Document Type: Conference Paper |
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Times cited : (9)
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References (12)
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