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Journal of Non-Crystalline Solids

Volumn 303, Issue 3, 2002, Pages 372-378

High-pressure resistivity behavior of As-Te-In glasses - The effect of network topological thresholds

(3) Sharmila, B H a Devaraju, J T b Asokan, S a

a INDIAN INSTITUTE OF SCIENCE (India)

b BANGALORE UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; COMPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC NETWORK TOPOLOGY; HIGH PRESSURE EFFECTS; METALLIZING;

CHALCOGENIDE GLASSES; CHEMICAL THRESHOLDS; HIGH PRESSURE RESISTIVITY;

GLASS;

EID: 0036605133 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(02)01048-7 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.