Tunable color emission of ZnGa2O4:Si4+ phosphors with enhanced brightness due to donor formation

Solid State Communications

Volumn 122, Issue 12, 2002, Pages 633-636

  Kang, H I ^a   Kim, J S ^a   Lee, M ^a   Bahng, J H ^a   Choi, J C ^a   Park, H L ^a   Kim, G C ^b   Kim, T W ^c   Hwang, Y H ^d   Mho, S I ^e   Eom, S H ^f   Yu, Y S ^f   Song, H J ^g   Kim, W T ^g  

^a Yonsei University   (South Korea)

^b Korea University of Technology and Education   (South Korea)

^c Kwangwoon University   (South Korea)

^d Pusan National University   (South Korea)

^e Ajou University   (South Korea)

^f Dong Eui University   (South Korea)

^g Chonnam National University   (South Korea)

Author keywords

A. ZnGa2O4; C. X ray scattering; D. Electronic band structure; E. Luminescence; E. Raman scattering

Indexed keywords

COLOR; DOPING (ADDITIVES); LIGHT EMISSION; PHOTOLUMINESCENCE; POSITIVE IONS; RAMAN SCATTERING; SILICON; SPECTRUM ANALYSIS; SUBSTITUTION REACTIONS; X RAY DIFFRACTION ANALYSIS; ZINC COMPOUNDS;

COLOR EMISSIONS;

PHOSPHORS;

EID: 0036600503     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00235-1     Document Type: Article

References (13)