Piezoelectricity in poled Ge-doped silica thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 5 B, 2002, Pages 3431-3432

  Uno, Takehiko ^a   Noge, Satoru ^a  

^a KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ge doped silica; Germanosilicate; Piezoelectric thin film; Piezoelectricity; Poling; Silica

Indexed keywords

COMPRESSIVE STRESS; ELECTRIC FIELDS; MAGNETRON SPUTTERING; PIEZOELECTRICITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SILICA; SUBSTRATES;

GERMANOSILICATE; MULTICHANNEL ELECTROCARDIOGRAPH; PIEZOELECTRIC CONSTANT; PIEZOELECTRIC RESPONSE; PIEZOELECTRIC RESPONSE VOLTAGE; POLING TREATMENT;

THIN FILMS;

EID: 0036578438     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.3431     Document Type: Article

References (4)