Comparative study of defect densities evaluated by electron spin resonance and constant photocurrent method in undoped and N-doped hydrogenated amorphous silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 5 A, 2002, Pages 2829-2833

  Shimizu, Tatsuo ^a   Shimada, Masaki ^a   Kumeda, Minoru ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

Constant photocurrent method; Dangling bond; Electron spin resonance; Hydrogenated amorphous silicon; Light soaking

Indexed keywords

AMORPHOUS FILMS; CRYSTAL DEFECTS; HYDROGENATION; PARAMAGNETIC RESONANCE; PHOTOCURRENTS; SEMICONDUCTOR DOPING;

CONSTANT PHOTOCURRENT METHOD (CPM);

AMORPHOUS SILICON;

EID: 0036578002     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.2829     Document Type: Article

References (15)